p-GaN Gate HEMT-Based 2T1C for Active Matrix <i>μ</i>LED Displays
This letter demonstrates an enhancement mode p-GaN gate HEMT-based 2T1C pixel circuit for active matrix (AM) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>LED displays. The 2T1C pixel circuit consists of two p-GaN gate HEMTs serving as the switching and driving transistors and a metal-insulator-metal (MIM) capacitor. The p-GaN gate HEMT shows a threshold voltage of 0.7 V and can provide a maximum driving current of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$675~\mu $ </tex-math></inline-formula>A. An on-off ratio of 108 is achieved, with an off-state current less than 10 pA. For the capacitor, a 20 nm Al2O3 layer is used as the dielectric, and the measured capacitance density is 4 fF/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m2. The proposed 2T1C can drive a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$20~\mu $ </tex-math></inline-formula>m <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>LED under a scan rate of 120 Hz. The extracted rise time and fall time of the VOUT are <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$15.75~\mu $ </tex-math></inline-formula>s and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$8.42~\mu $ </tex-math></inline-formula>s, respectively. In addition, the pulse amplitude modulation (PAM) of the 2T1C has been demonstrated, showing that the light intensity of the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>LED can be modulated by the amplitude of the data signal.
Authors
- Zhaojun Liu (ORCID: https://orcid.org/0000-0002-7746-2786)
- Jun Ma (ORCID: https://orcid.org/0000-0002-7768-1532)
- Wenjun Huang (ORCID: https://orcid.org/0009-0007-9745-7689)
- Yaying Liu (ORCID: https://orcid.org/0000-0002-3131-4243)
Institutions
- Southern University of Science and Technology (CN)
Publication Details
- Journal
- IEEE Electron Device Letters
- Published
- 2024-10-24
- DOI
- https://doi.org/10.1109/led.2024.3485914
- Citations
- 4
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 1.24
Funders
- National Natural Science Foundation of China
- Gyeongnam National University of Science and Technology
- National Key Research and Development Program of China