p-GaN Gate HEMT-Based 2T1C for Active Matrix <i>μ</i>LED Displays

This letter demonstrates an enhancement mode p-GaN gate HEMT-based 2T1C pixel circuit for active matrix (AM) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>LED displays. The 2T1C pixel circuit consists of two p-GaN gate HEMTs serving as the switching and driving transistors and a metal-insulator-metal (MIM) capacitor. The p-GaN gate HEMT shows a threshold voltage of 0.7 V and can provide a maximum driving current of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$675~\mu $ </tex-math></inline-formula>A. An on-off ratio of 108 is achieved, with an off-state current less than 10 pA. For the capacitor, a 20 nm Al2O3 layer is used as the dielectric, and the measured capacitance density is 4 fF/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m2. The proposed 2T1C can drive a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$20~\mu $ </tex-math></inline-formula>m <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>LED under a scan rate of 120 Hz. The extracted rise time and fall time of the VOUT are <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$15.75~\mu $ </tex-math></inline-formula>s and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$8.42~\mu $ </tex-math></inline-formula>s, respectively. In addition, the pulse amplitude modulation (PAM) of the 2T1C has been demonstrated, showing that the light intensity of the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>LED can be modulated by the amplitude of the data signal.

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Publication Details

Journal
IEEE Electron Device Letters
Published
2024-10-24
DOI
https://doi.org/10.1109/led.2024.3485914
Citations
4
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
1.24

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article

p-GaN Gate HEMT-Based 2T1C for Active Matrix μLED Displays

Zhaojun Liu, Jun Ma, Wenjun Huang, Yaying Liu
4 citations
IEEE Electron Device Letters
GaN-based semiconductor devices and materials
1.24
article

p-GaN Gate HEMT-Based 2T1C for Active Matrix μLED Displays

Zhaojun Liu, Jun Ma, Wenjun Huang, Yaying Liu
article en
4 citations

Abstract

This letter demonstrates an enhancement mode p-GaN gate HEMT-based 2T1C pixel circuit for active matrix (AM) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>LED displays. The 2T1C pixel circuit consists of two p-GaN gate HEMTs serving as the switching and driving transistors and a metal-insulator-metal (MIM) capacitor. The p-GaN gate HEMT shows a threshold voltage of 0.7 V and can provide a maximum driving current of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$675~\mu $ </tex-math></inline-formula>A. An on-off ratio of 108 is achieved, with an off-state current less than 10 pA. For the capacitor, a 20 nm Al2O3 layer is used as the dielectric, and the measured capacitance density is 4 fF/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m2. The proposed 2T1C can drive a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$20~\mu $ </tex-math></inline-formula>m <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>LED under a scan rate of 120 Hz. The extracted rise time and fall time of the VOUT are <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$15.75~\mu $ </tex-math></inline-formula>s and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$8.42~\mu $ </tex-math></inline-formula>s, respectively. In addition, the pulse amplitude modulation (PAM) of the 2T1C has been demonstrated, showing that the light intensity of the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>LED can be modulated by the amplitude of the data signal.

IEEE Electron Device LettersVol. 45(12)
Southern University of Science and Technology (CN)
National Natural Science Foundation of China, Gyeongnam National University of Science and Technology, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 21%
GaN-based semiconductor devices and materials
1.24
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