High-Reliability HfO₂/ZrO₂ Superlattice Ferroelectric Poly-Si FinFET Memory Device Utilizing Green Laser Crystallization

In this study, we employ GIXRD to determine that the HfO2/ZrO2 superlattice (SL-HZO) exhibits a higher proportion of orthorhombic phase than conventional HZO. We first demonstrate low-temperature polycrystalline silicon (LTPS) formed by green laser crystallization with SL-HZO to manufacture ferroelectric FinFET (Fe-FinFET). SEM and AFM analyses confirmed the high quality of the modified polycrystalline silicon channel. The LTPS/SL-HZO Fe-FinFET demonstrated an impressive memory window (MW) of 1.93 V under ±5 V high-speed (100 ns) pulse operation. It exhibited a robust endurance of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{6}}$ </tex-math></inline-formula> cycles, with the MW remaining stable at 1.92 V over <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{4}}$ </tex-math></inline-formula> s without degradation. In conclusion, the LTPS/SL-HZO Fe-FinFET shows outstanding performance and reliability, indicating significant potential for non-volatile memory applications.