SCAPS numerical modeling of CBTS/WO<sub>3</sub> thin film solar cell

The quaternary compound Cu 2 BaSnS 4 (CBTS) has emerged as a suitable and attractive light-harvesting material due to its promising optoelectronic features as well as nontoxic and low-cost constituent elements. Yet efficiency of CBTS-based solar cells did not reach the Shockley-Queisser limit. Here, what we believe to be a novel structure ITO/WO 3 /CBTS heterojunction solar cell is designed and modeled using a solar cell capacitance simulator in one-dimension (SCAPS-1D). In this work, a what we also believe to be a novel WO 3 as a buffer layer is proposed for the first time for the efficiency enhancement of CBTS thin film solar cells. Numerical investigation of the performance of CBTS-based solar cells without and with cuprous oxide (Cu 2 O) back surface field (BSF) is explored. The impact of thickness, doping density, bulk, and interface defect density of an absorber, buffer and window layer, working temperature, shunt and series resistance, back contact work function, and back surface recombination velocity were analyzed and optimized without and with the BSF layer. In this work, the optimized solar cell achieved an efficiency of 18.8%, fill factor (FF) of 83.79%, short-circuit current density (J SC ) of 15.99 mA/cm 2 , and open circuit voltage (V OC ) of 1.4 V without Cu 2 O BSF layer at optimal CBTS absorber and WO 3 buffer layer thickness of 2 µm and 0.04 µm respectively. Furthermore, the efficiency boosted to 21.12% with V OC of 1.43 V, J SC of 16.8 mA/cm 2 and FF of 87.77% by inserting 0.1 µm Cu 2 O BSF layer. Therefore, these results will facilitate the fabrication of an efficient and low-cost CBTS-based solar cell with promising WO 3 and Cu 2 O as buffer and BSF layer, respectively.

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Publication Details

Journal
Optics Continuum
Published
2024-10-23
DOI
https://doi.org/10.1364/optcon.536545
Citations
1
Primary Topic
Silicon and Solar Cell Technologies
Type
article
Field-Weighted Citation Impact
0.21
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article

SCAPS numerical modeling of CBTS/WO3 thin film solar cell

Towhid Adnan Chowdhury
1 citations
Optics Continuum
Silicon and Solar Cell Technologies
0.21
article

SCAPS numerical modeling of CBTS/WO3 thin film solar cell

Towhid Adnan Chowdhury
article en
1 citations

Abstract

The quaternary compound Cu 2 BaSnS 4 (CBTS) has emerged as a suitable and attractive light-harvesting material due to its promising optoelectronic features as well as nontoxic and low-cost constituent elements. Yet efficiency of CBTS-based solar cells did not reach the Shockley-Queisser limit. Here, what we believe to be a novel structure ITO/WO 3 /CBTS heterojunction solar cell is designed and modeled using a solar cell capacitance simulator in one-dimension (SCAPS-1D). In this work, a what we also believe to be a novel WO 3 as a buffer layer is proposed for the first time for the efficiency enhancement of CBTS thin film solar cells. Numerical investigation of the performance of CBTS-based solar cells without and with cuprous oxide (Cu 2 O) back surface field (BSF) is explored. The impact of thickness, doping density, bulk, and interface defect density of an absorber, buffer and window layer, working temperature, shunt and series resistance, back contact work function, and back surface recombination velocity were analyzed and optimized without and with the BSF layer. In this work, the optimized solar cell achieved an efficiency of 18.8%, fill factor (FF) of 83.79%, short-circuit current density (J SC ) of 15.99 mA/cm 2 , and open circuit voltage (V OC ) of 1.4 V without Cu 2 O BSF layer at optimal CBTS absorber and WO 3 buffer layer thickness of 2 µm and 0.04 µm respectively. Furthermore, the efficiency boosted to 21.12% with V OC of 1.43 V, J SC of 16.8 mA/cm 2 and FF of 87.77% by inserting 0.1 µm Cu 2 O BSF layer. Therefore, these results will facilitate the fabrication of an efficient and low-cost CBTS-based solar cell with promising WO 3 and Cu 2 O as buffer and BSF layer, respectively.

Optics ContinuumVol. 3(11)
Openalex Percentile: Top 47%
Silicon and Solar Cell Technologies
0.21
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