Room temperature mid-wave infrared guided mode resonance InAsSb photodetectors

We demonstrate room temperature operation of mid-wave infrared photodetectors leveraging a guided mode resonance architecture and bulk alloy InAsSb absorbers. Room temperature operation with low dark current is achieved by using detector structures with ultra-thin (150, 250 nm) absorbers leveraging the strong confinement enabled by the guided mode architecture. Devices with 1D and 2D grating arrays are fabricated and characterized, and compared to unpatterned detector devices. We see enhancement in the detectors’ optical response associated with coupling to both TE- and TM-polarized guided modes and good agreement between experimental and theoretically-predicted behavior. We show strong enhancement for unpolarized light incident on 2D grating arrays, with a broader spectral response than observed for polarized light incident upon 1D grating GMR detectors. The bulk InAsSb detectors presented in this work offer enhanced performance at room temperature for a range of imaging and sensing applications.

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Publication Details

Journal
Applied Physics Letters
Published
2024-10-21
DOI
https://doi.org/10.1063/5.0238913
Citations
9
Primary Topic
Advanced Semiconductor Detectors and Materials
Type
article
Field-Weighted Citation Impact
1.88

Funders

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article

Room temperature mid-wave infrared guided mode resonance InAsSb photodetectors

Morgan Bergthold, N. C. Mansfield, Viktor A. Podolskiy, Daniel Wasserman et al.
9 citations
Applied Physics Letters
Advanced Semiconductor Detectors and Materials
1.88
article

Room temperature mid-wave infrared guided mode resonance InAsSb photodetectors

Morgan Bergthold, N. C. Mansfield, Viktor A. Podolskiy, Daniel Wasserman, Abhilasha Kamboj, Yadviga Tischenko, S. Purkait, A. R. Raju
article en
9 citations

Abstract

We demonstrate room temperature operation of mid-wave infrared photodetectors leveraging a guided mode resonance architecture and bulk alloy InAsSb absorbers. Room temperature operation with low dark current is achieved by using detector structures with ultra-thin (150, 250 nm) absorbers leveraging the strong confinement enabled by the guided mode architecture. Devices with 1D and 2D grating arrays are fabricated and characterized, and compared to unpatterned detector devices. We see enhancement in the detectors’ optical response associated with coupling to both TE- and TM-polarized guided modes and good agreement between experimental and theoretically-predicted behavior. We show strong enhancement for unpolarized light incident on 2D grating arrays, with a broader spectral response than observed for polarized light incident upon 1D grating GMR detectors. The bulk InAsSb detectors presented in this work offer enhanced performance at room temperature for a range of imaging and sensing applications.

Applied Physics LettersVol. 125(17)
University of Massachusetts Lowell (US), University of Delaware (US), The University of Texas at Austin (US)
National Science Foundation, National Aeronautics and Space Administration
Openalex Percentile: Top 14%
Advanced Semiconductor Detectors and Materials
1.88
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Room temperature mid-wave infrared guided mode resonance InAsSb photodetectors — Morgan Bergthold, N. C. Mansfield, et al. · Applied Physics Letters (2024) | TGRS Research Map | TGRS