Degradation mechanism during catastrophic optical damage in 385 nm GaN-based ultraviolet laser diodes

The failure mechanism of 385 nm GaN-based ultraviolet (UV) laser diodes (LDs) has been investigated. The degradation factors were studied by analyzing scanning electron microscopy (SEM), cathodoluminescence, and transmission electron microscopy (TEM) after aging. In degraded UV LD, degradation is easily observed on the anterior cavity facet, with holes found in the epitaxial GaN material, primarily concentrated in the quantum wells and waveguide regions of the LDs. This shows that the degradation may be closely related to the higher photon energy of the UV laser beam emitted by UV LDs. In the aging process of samples, emission of UV lasers leads to deterioration at the interface and in the semiconductor. This degradation leads to continuous heat accumulation and may create a positive feedback loop. Ultimately, this results in the failure of the UV LD. This study presents a possible major factor for the shorter lifetime of UV LD compared to blue LD. Therefore, it is very significant to improve the interface quality for extending the lifetime of UV LDs.