Epitaxial (AlxGa1−x−yIny)2O3 alloys lattice matched to monoclinic Ga2O3 substrates

We have epitaxially stabilized a series of monoclinic (AlxGa1−x−yIny)2O3 alloys by careful choice of molecular beam epitaxy growth conditions, which balance alloy growth with suboxide desorption. The films are pseudomorphic to (010) β-Ga2O3 substrates at thicknesses up to 150 nm with compositions ranging from (Al0.01Ga0.83In0.16)2O3 to (Al0.24Ga0.75In0.03)2O3. The absorption edge shifts from approximately 4.62–5.14 eV with coincidently increasing Al and decreasing In mole fractions. J–V measurements reveal an increase in resistivity over four orders of magnitude with a maximum value of 4.2 × 105 Ω-cm for (Al0.17Ga0.76In0.07)2O3, which has nearly identical lattice parameters (both in-plane and out-of-plane) to the underlying β-Ga2O3. Scanning transmission electron microscopy of this sample reveals a mostly uniform and single crystalline film, though we identify areas of non-uniform In incorporation and some γ-phase inclusions. This work demonstrates the feasibility of thick layers lattice-matched to β-Ga2O3 with increased bandgap compared to phase-separation limited (Al,Ga)2O3. These alloys can enable higher bandgap epitaxial dielectrics and high sheet charge density transistors by increasing the conduction band offset with respect to β-Ga2O3.