The Impact of Varying TEM Accelerating Voltage on Elemental Analysis of Semiconductor Defects

Abstract In the field of failure analysis (FA) for semiconductor devices, the transmission electron microscope (TEM) as an analytical tool is integral to finding visible evidence of defects and their root cause. Especially as device features shrink, imaging and analyzing increasingly subtle defects requires detailed elemental analysis. In this work, elemental analysis using an aberration-corrected TEM at different accelerating voltages (200 kV and 80 kV) is discussed. The impact of accelerating voltage on elemental analysis with regards to Electron Energy Loss Spectroscopy (EELS) and Energy Dispersive X-Ray Spectroscopy (EDS) is of central focus. Two case studies involving TEM samples of different thicknesses are presented that clearly indicate important differences in the analytical data collected at different accelerating voltages. The work revealed that for elemental analysis of thick TEM samples (100 nm and over) 200 kV is preferred, and for thin samples, 80 kV provides superior signal in EDS and EELS.