Failure Investigation of Copper-to-Copper Bonding in Advanced 3D Packaging—From Sample Preparation to Structural Characterization
Abstract This paper describes the detailed sample preparation of direct Cu-to-Cu bonding in 3D packaging between processor and memory. Different sample preparation techniques are described and compared. The sample preparation methods will then be confirmed by advanced structural characterization and strain measurement. The presence of voids and strain at the bonding interface is associated with the development of device failure.
Authors
- Paweł Nowakowski (ORCID: https://orcid.org/0000-0003-0053-4507)
- Richard Li
- Mary Ray
- Paul Fischione
Publication Details
- Journal
- Proceedings - International Symposium for Testing and Failure Analysis
- Published
- 2024-10-23
- DOI
- https://doi.org/10.31399/asm.cp.istfa2024p0200
- Citations
- 1
- Primary Topic
- 3D IC and TSV technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.21