Introduction of a New EBAC Technique with Lamella-like Sample in DRAM Devices

Abstract In this paper, we approach three Nanoprobing EBAC (Electron Beam Absorbed Current) applications for DRAM metal lines. Typically, more than 70-80% of metal lines in DRAM devices experienced invisible EBAC imaging, due to high-gain EBAC amplifier becoming saturated. This overloaded case typically occurs when the signal probe lands on a contact connected to the well, source, or drain of the substrate. One of the ways to overcome this limit, a new EBAC analysis approach on lamella-like sample, is introduced in this paper. We introduce a large lamella-like sample by using Xe+ PFIB for EBAC analysis technique on DRAM metal line as well as to compare it with the conventional EBAC technique. Delayering technique also used by plasma FIB for uniform sample surface to target metal layer.