Nitrogen Vacancy Quantum Sensing for Current Density Imaging with Sub 30 nm Resolution

Abstract Non-destructive failure analysis is often limited by the sensitivity or the resolution of the method utilized, making state-of-the-art integrated circuits difficult to analyze. Here, we present a powerful method for surface failure analysis, based on scanning a single Nitrogen Vacancy center over the sample. This results in quantitative current density maps with high sensitivity and sub-30 nm resolution, detecting for example, open and short circuits and visualizing the current flow. We demonstrate the technology by mapping current flow through device structures separated by gaps as low as 30 nm. We further show how resolution is reduced as a capping layer is added, by measuring at a fixed offset of 30 nm from the surface.