Exploring the Effectiveness of Combining Electron-Beam Probing and Optical Techniques in a 16 nm Technology Device
Abstract This work demonstrates the capability of E-beam probing, combined with optical techniques, to effectively monitor the activity of the IC structures and extract the signals from a 16nm technology device through the silicon backside. We conducted optical probing to localize the area of interest on the device, where we aimed the E-beam probing to gather the signal. Once the target was located, a trench down to the STI level was opened on the device. This enables the use of E-beam probing, which has a much higher resolution than the optical methods.
Authors
- Sebastian Brand (ORCID: https://orcid.org/0000-0003-2278-2042)
- Christian Boit (ORCID: https://orcid.org/0000-0002-4169-6943)
- Jörg Jatzkowski
- Elham Amini (ORCID: https://orcid.org/0000-0002-4580-4243)
- Frank Altmann (ORCID: https://orcid.org/0000-0002-0202-1193)
- Tüba Kiyan
- Lars Renkes
- Jean-Pierre Seifert (ORCID: https://orcid.org/0000-0001-5725-4667)
- Antonio Saavedra
Institutions
- Fraunhofer Institute for Microstructure of Materials and Systems (DE)
- Technische Universität Berlin (DE)
Publication Details
- Journal
- Proceedings - International Symposium for Testing and Failure Analysis
- Published
- 2024-10-23
- DOI
- https://doi.org/10.31399/asm.cp.istfa2024p0259
- Primary Topic
- Integrated Circuits and Semiconductor Failure Analysis
- Type
- article
- Field-Weighted Citation Impact
- 0.00