Innovations in Beam-Based Defect Localization Methods for Advanced 3D Interconnects

Abstract Advancements in light-induced capacitance alteration (LICA) and optical and ultrasonic beam-induced resistance change ((S)OBIRCH) methods for the localization of open, resistive, and leakage failures in 3D integration technologies are reported. Additionally, a novel sample preparation approach is introduced to improve imaging resolution for optical fault isolation methods. This approach involves re-routing probe pads using a low-profile redistribution layer, realized by conductive inkjet printing, enabling the use of short-working-distance and liquid immersion objectives while probing from the same side of the chip.