Localization of Subtle Front-End FinFET Defects Using EBIC

Abstract We demonstrate the effectiveness of combining top-down and cross-sectional electron beam induced current (EBIC) imaging with SEM nanoprobe analysis to identify subtle front-end defects in advanced FinFET technology. Our approach successfully localized a novel fin nanocrack defect that had previously eluded detection through conventional TEM imaging. This systematic resistive pMOS failure, observable only in memory arrays at 150°C, exemplifies the power of EBIC as an alternative to scanning capacitance microscopy for detecting dopant anomalies and subtle defects. The sample preparation and EBIC methodologies presented here are broadly applicable across CMOS technologies, offering a versatile approach to defect analysis.