Discrete Ru(Sn)<sub>6</sub> Octahedra Encapsulated in Oxoindate Channels: RuSn<sub>6</sub>In<sub>6</sub>O<sub>16</sub> with Highly Ordered In/Sn Sites

A new transition metal–mixed main group element cluster compound, RuSn6In6O16, was prepared via the tin-flux method. Single-crystal structure refinements show that RuSn6In6O16 crystallizes in a monoclinic crystal system with a centrosymmetric C2/m space group. It shows a unique structure type reminiscent of metal–organic framework (MOF) structures. The structure exhibits a highly positive [Ru(Sn)6]14+ metallic cluster (guest) encapsulated in an oxoindate framework (host) formed by a combination of corner- and edge-sharing InO6/InO7 polyhedra. The oxidation states were experimentally and theoretically determined to be Ru2+ and Sn2+ in the metallic cluster and In3+ in the oxide layers. The cluster shows a direct band gap like that of semiconducting materials, which was also confirmed by band structure calculations. The photoluminescence spectrum exhibits a peak at 455 nm (blue emission), which may originate from oxygen vacancies in the microcrystalline powder. This indicates that RuSn6In6O16 has the potential to be used in light-emitting diodes (LEDs) and photovoltaic applications.

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Publication Details

Journal
Chemistry of Materials
Published
2024-10-23
DOI
https://doi.org/10.1021/acs.chemmater.4c02253
Citations
1
Primary Topic
Ferroelectric and Piezoelectric Materials
Type
article
Field-Weighted Citation Impact
0.12

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article

Discrete Ru(Sn)6 Octahedra Encapsulated in Oxoindate Channels: RuSn6In6O16 with Highly Ordered In/Sn Sites

Samuel Yick, Kai Sun, Mohammed S. Abdelbassit, Tilo Söhnel et al.
1 citations
Chemistry of Materials
Ferroelectric and Piezoelectric Materials
0.12
article

Discrete Ru(Sn)6 Octahedra Encapsulated in Oxoindate Channels: RuSn6In6O16 with Highly Ordered In/Sn Sites

Samuel Yick, Kai Sun, Mohammed S. Abdelbassit, Tilo Söhnel, Ziyun Wang, Zhanghao Ren
article en
1 citations

Abstract

A new transition metal–mixed main group element cluster compound, RuSn6In6O16, was prepared via the tin-flux method. Single-crystal structure refinements show that RuSn6In6O16 crystallizes in a monoclinic crystal system with a centrosymmetric C2/m space group. It shows a unique structure type reminiscent of metal–organic framework (MOF) structures. The structure exhibits a highly positive [Ru(Sn)6]14+ metallic cluster (guest) encapsulated in an oxoindate framework (host) formed by a combination of corner- and edge-sharing InO6/InO7 polyhedra. The oxidation states were experimentally and theoretically determined to be Ru2+ and Sn2+ in the metallic cluster and In3+ in the oxide layers. The cluster shows a direct band gap like that of semiconducting materials, which was also confirmed by band structure calculations. The photoluminescence spectrum exhibits a peak at 455 nm (blue emission), which may originate from oxygen vacancies in the microcrystalline powder. This indicates that RuSn6In6O16 has the potential to be used in light-emitting diodes (LEDs) and photovoltaic applications.

Chemistry of MaterialsVol. 37(3)
University of Auckland (NZ), MacDiarmid Institute for Advanced Materials and Nanotechnology (NZ)
Australian Nuclear Science and Technology Organisation, Australian Synchrotron, University of Auckland
Openalex Percentile: Top 59%
Ferroelectric and Piezoelectric Materials
0.12
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