Implementation of FIB Automation Methodologies for TEM Applications in Memory Devices

Abstract This paper presents an automated focused ion beam (FIB) workflow that revolutionizes FIB-TEM sample preparation for semiconductor analysis, particularly for NAND and DRAM devices. This system integrates with Helios 5 HX and Helios 6 HX platforms to achieve consistent, hands-free sample preparation down to ~10 nm thickness. Our approach transforms traditional manual processes into automated workflows through comprehensive best-known method (BKM) templates, custom recipes, and proprietary code development in AutoTEM and iFast software architectures. The system features advanced machine vision algorithms and custom hardware components that enable precise sample coordination, allowing for both vertical and perpendicular TEM sample preparation from 3D structures at any wafer depth. Implementation results demonstrate significant improvements over manual processes, including thousands of hours in workforce savings, reduced material waste, faster throughput, improved data consistency, and minimized human error in DRAM and NAND structural analysis.

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Publication Details

Journal
Proceedings - International Symposium for Testing and Failure Analysis
Published
2024-10-23
DOI
https://doi.org/10.31399/asm.cp.istfa2024p0392
Primary Topic
Integrated Circuits and Semiconductor Failure Analysis
Type
article
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article

Implementation of FIB Automation Methodologies for TEM Applications in Memory Devices

James M. Miller, Yunyu Wang, Robert Gifford, Cheng-Han Li et al.
Proceedings - International Symposium for Testing and Failure Analysis
Integrated Circuits and Semiconductor Failure Analysis
article

Implementation of FIB Automation Methodologies for TEM Applications in Memory Devices

James M. Miller, Yunyu Wang, Robert Gifford, Cheng-Han Li, Tyler Lenzi, Vinicio de Jesús Pérez, Xue Rui, Sang‐Hoon Lee, Ning Lü, Qiang Jin, Shixin Wang, S. C. Chan, Sven Beunen, Kenton Burns
article en

Abstract

Abstract This paper presents an automated focused ion beam (FIB) workflow that revolutionizes FIB-TEM sample preparation for semiconductor analysis, particularly for NAND and DRAM devices. This system integrates with Helios 5 HX and Helios 6 HX platforms to achieve consistent, hands-free sample preparation down to ~10 nm thickness. Our approach transforms traditional manual processes into automated workflows through comprehensive best-known method (BKM) templates, custom recipes, and proprietary code development in AutoTEM and iFast software architectures. The system features advanced machine vision algorithms and custom hardware components that enable precise sample coordination, allowing for both vertical and perpendicular TEM sample preparation from 3D structures at any wafer depth. Implementation results demonstrate significant improvements over manual processes, including thousands of hours in workforce savings, reduced material waste, faster throughput, improved data consistency, and minimized human error in DRAM and NAND structural analysis.

Proceedings - International Symposium for Testing and Failure AnalysisVol. 84918
Micron (United States) (US)
Openalex Percentile: Top 84%
Integrated Circuits and Semiconductor Failure Analysis
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Implementation of FIB Automation Methodologies for TEM Applications in Memory Devices — James M. Miller, Yunyu Wang, et al. · Proceedings - International Symposium for Testing and Failure Analysis (2024) | TGRS Research Map | TGRS