Computer simulation of x-ray section topography of gas pores in a silicon carbide crystal

The results of computer simulation of images of gas pores in a silicon carbide crystal in sectional topograms, that is, during diffraction of a narrow beam of X-rays in the crystal, are presented for the first time. For this purpose, a special module of the universal computer program XRWP was used. This program is developing by the author to calculate the effects of coherent X-ray optics. The calculation method combines two methods, previously known, namely, Fourier transform methods (Kato method), and the method of solving the Takagi-Taupin equations. It is shown that gas pores can produce a wide variety of images, depending on the experimental conditions and the position of the gas pore inside the crystal.