Event-Driven Voltage Reference with Bandgap-Class Temperature Coefficient Across-Corner with 100-pW Power at 0.8 V
A voltage reference with event-driven temperature compensation is proposed to reduce power under common-case moderate fluctuations. An accurate reference is occasionally turned on to fine-tune a low-power clone when temperature changes by more than a threshold. As opposed to sample and hold references whose period is limited by capacitor discharge due to leakage, the proposed reference has unrestrictedly long off-periods and reduce power below 100 pW. At the same time, bandgap-class temperature coefficient and low process sensitivity across corners are achieved in 180 nm.
Authors
- Luigi Fassio (ORCID: https://orcid.org/0000-0002-6080-4444)
- Massimo Alioto (ORCID: https://orcid.org/0000-0002-4127-8258)
- Hoang Hong Hanh
Institutions
- National University of Singapore (SG)
Publication Details
- Published
- 2024-09-09
- DOI
- https://doi.org/10.1109/esserc62670.2024.10719401
- Citations
- 1
- Primary Topic
- Radiation Effects in Electronics
- Type
- article
- Field-Weighted Citation Impact
- 0.21
Funders
- Ministry of Education