Characterizations and Framework Modeling of Bulk MOSFET Threshold Voltage Based on a Physical Charge-Based Model Down to 4 K
This work systematically characterizes and models threshold voltage ($V_{t h}$) of bulk MOSFETs fabricated on commercial 40-nm and 180-nm processes from a leading foundry from 300 K down to 4 K. In this framework, temperature effects associated with each aspect of threshold voltage, i.e., channel size scaling (both width W and length L), as well as terminal biases that induce DIBL and body effect are systematically investigated and precisely modeled, respectively. For the first time, these second-order effects are characterized and modeled down to 4 K based on our recently developed physical charge-based model, combined with the adjusted BSIM4 model.
Authors
- Hao Su
- Feichi Zhou (ORCID: https://orcid.org/0000-0001-7756-1082)
- Longyang Lin (ORCID: https://orcid.org/0000-0002-4702-737X)
- Yida Li (ORCID: https://orcid.org/0000-0002-5675-582X)
- Guangchong Hu
- H.Y. Yu (ORCID: https://orcid.org/0000-0002-1527-8756)
- Zhuxuan Ma (ORCID: https://orcid.org/0000-0002-7024-425X)
- Xiaoguang Liu (ORCID: https://orcid.org/0000-0002-0935-3094)
- Wenxin Li (ORCID: https://orcid.org/0000-0003-4329-4136)
- Kai Chen (ORCID: https://orcid.org/0000-0001-5128-4013)
- Yu He
- Shenghua Zhou (ORCID: https://orcid.org/0000-0002-9271-6633)
- Haihan Wu
- Yuhuan Lin (ORCID: https://orcid.org/0000-0002-5117-5893)
- Xu Si
- Yunfeng Xie (ORCID: https://orcid.org/0000-0003-1189-4321)
- Yiyuan Cai
Institutions
- Southern University of Science and Technology (CN)
- Beijing Academy of Quantum Information Sciences (CN)
Publication Details
- Published
- 2024-09-09
- DOI
- https://doi.org/10.1109/esserc62670.2024.10719583
- Citations
- 1
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.21