Integration of GAA Monolayer MoS<sub>2</sub> Nanosheet FETs with Gate First Process for Future 2D CFET Scaling
CFETs based on 2D materials hold the potential to replace Si as a channel at advanced technology nodes. In this work, gate-all-around (GAA) nanosheet FETs with the monolayer MoS $\mathbf{M}_{2}$ channels are presented. The MoS $\mathbf{M o n o l a y e r}_{2}$ was successfully suspended above the oxide trench of varying lengths. Less than $\mathbf{2 0 \%}$ sag was observed up to a trench length of 200 nm. For the first time, a gate-first process, in combination with critical point drying, is introduced to scale down GAA nanosheet FETs to 50 nm channel width and length without introducing damage to the monolayer MoS ${ }_{2}$. Perfect conformal gate stack deposition on the monolayer MoS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> sheets is achieved by using TMA ‘soaking’ treatment. The successful demonstration of monolayer GAA 2D nanosheet FET further shows high potential as a basic component for the future 2D CFET chips integration.
Authors
- T. Schram (ORCID: https://orcid.org/0000-0003-1533-7055)
- Robert K. Grubbs
- Pawan Kumar (ORCID: https://orcid.org/0000-0002-5764-2915)
- Kaustuv Banerjee
- Quentin Smets (ORCID: https://orcid.org/0000-0002-2356-5915)
- Daire Cott
- Tien Dat Ngo (ORCID: https://orcid.org/0009-0009-7185-308X)
- Devin Verreck (ORCID: https://orcid.org/0000-0002-3833-5880)
- César Javier Lockhart de la Rosa (ORCID: https://orcid.org/0000-0002-1401-0141)
- Surajit Sutar (ORCID: https://orcid.org/0000-0003-3114-718X)
- Souvik Ghosh (ORCID: https://orcid.org/0000-0002-9647-7967)
- Gouri Sankar Kar (ORCID: https://orcid.org/0000-0003-3122-4237)
- Dennis H. van Dorp (ORCID: https://orcid.org/0000-0002-1085-4232)
- Fengben Xi (ORCID: https://orcid.org/0000-0002-1616-1525)
- Fei Han (ORCID: https://orcid.org/0000-0002-8050-3657)
- Himanshu Sharma (ORCID: https://orcid.org/0000-0003-1122-3405)
- Xiangyu Wu (ORCID: https://orcid.org/0000-0002-6607-1819)
- Dennis Lin (ORCID: https://orcid.org/0000-0002-1577-6050)
- Ludovic Goux
Institutions
- IMEC (BE)
Publication Details
- Published
- 2024-09-09
- DOI
- https://doi.org/10.1109/esserc62670.2024.10719449
- Citations
- 5
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 1.04
Funders
- Graphene Flagship