Research of the Spacer Layers' Material Variation Impact on the Resonant-Tunneling Diode's Current-Voltage Characteristic

The impact of indium doping percentage in resonant-tunneling diode's spacer layer on the diode's current-voltage characteristic was assessed by the means of computer modeling. The previously developed resonant-tunneling diode's physical and topological model has been supplemented with the parameters required for diffusion processes modeling in the active region of the diodes with InGaAs spacer layers. It is shown that with 20% substitution of gallium by indium in the studied resonant-tunneling diode's spacer layers, the peak current of the current-voltage characteristic's initial section increases approximately by 5 times, the peak voltage - approximately by 2 times. The peak current's and peak voltage's dependencies on the indium doping percentage in the resonant-tunneling diode's spacer layers were obtained. From the results of the study, it was concluded that it is promising to include the resonant-tunneling diode's spacer layers' chemical composition in the controlled parameters of the diode's design parameters optimization to achieve the required electrical characteristics.