A DVGA Indirect Time-of-Flight Image Sensor With 3.5μm Pixel in 65nm/65nm Stacked BSI CMOS Technology

A double VGA ($960 \times 640$) resolution indirect time-of-flight (iToF) image sensor with a pixel pitch of $3.5 \mu \mathrm{~m}$ has been implemented in a $65 \mathrm{~nm} / 65 \mathrm{~nm}$ stacked BSI technology. It achieves a quantum efficiency (QE) of 40% at 940 nm wavelength and a demodulation efficiency (DME) of 86% at 100 MHz demodulation frequency. A special focus was laid on balancing the utilization of the sensor wafer with the bottom logic wafer to achieve the best pixel count to silicon area ratio. In order to guarantee system level performance, the major target use-cases like face authentication, room scanning, and computational photography have been analyzed and mapped on the sensor architecture. This enables the best compromise between depth performance, silicon cost and power consumption for the given target applications. The sensor consumes 180 mW at 30fps. A special low power always-on mode switches the sensor to full capture once an activity is detected. During this operation mode, the imager (including VCSEL) consumes less than 1 mW.

Authors

Institutions

Publication Details

Published
2024-09-09
DOI
https://doi.org/10.1109/esserc62670.2024.10719472
Citations
2
Primary Topic
CCD and CMOS Imaging Sensors
Type
article
Field-Weighted Citation Impact
0.42
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

A DVGA Indirect Time-of-Flight Image Sensor With 3.5μm Pixel in 65nm/65nm Stacked BSI CMOS Technology

Markus Dielacher, Martin Flatscher, Jens Prima, S. Böhmer et al.
2 citations
CCD and CMOS Imaging Sensors
0.42
article

A DVGA Indirect Time-of-Flight Image Sensor With 3.5μm Pixel in 65nm/65nm Stacked BSI CMOS Technology

Markus Dielacher, Martin Flatscher, Jens Prima, S. Böhmer, T. Mono, Matthias Franke, Markus Hänsler, Carl Philipp Koppen, Samuel Freywald, Robert Lobnik
article en
2 citations

Abstract

A double VGA ($960 \times 640$) resolution indirect time-of-flight (iToF) image sensor with a pixel pitch of $3.5 \mu \mathrm{~m}$ has been implemented in a $65 \mathrm{~nm} / 65 \mathrm{~nm}$ stacked BSI technology. It achieves a quantum efficiency (QE) of 40% at 940 nm wavelength and a demodulation efficiency (DME) of 86% at 100 MHz demodulation frequency. A special focus was laid on balancing the utilization of the sensor wafer with the bottom logic wafer to achieve the best pixel count to silicon area ratio. In order to guarantee system level performance, the major target use-cases like face authentication, room scanning, and computational photography have been analyzed and mapped on the sensor architecture. This enables the best compromise between depth performance, silicon cost and power consumption for the given target applications. The sensor consumes 180 mW at 30fps. A special low power always-on mode switches the sensor to full capture once an activity is detected. During this operation mode, the imager (including VCSEL) consumes less than 1 mW.

Infineon Technologies (Germany) (DE)
Affordable and clean energy
Openalex Percentile: Top 37%
CCD and CMOS Imaging Sensors
0.42
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

A DVGA Indirect Time-of-Flight Image Sensor With 3.5μm Pixel in 65nm/65nm Stacked BSI CMOS Technology — Markus Dielacher, Martin Flatscher, et al. · (2024) | TGRS Research Map | TGRS