A 21.3-to-30.1 GHz Reversed Current-reuse LNA with Load Regulation Enhancing Wideband Noise and Input Matching

This paper presents a wideband simultaneous noise and input matching (SNIM) low-noise amplifier (LNA) with load regulation and $g_{\mathrm{m}}$-boosting techniques based on a reversed low power three-stage current–reuse topology. Based on magnetically coupled resonator (MCR), the load regulation technology also reduces the high frequency noise and extends the response bandwidth of the gain. Fabricated in 55-nm CMOS technology, the LNA achieves a measured power gain of 16.5 dB at 28 GHz with a -3-dB bandwidth (BW) of 8.8 GHz. Within the entire band of interest, the measured noise figure (NF) matching ($\mathrm{NF}^{-} \mathrm{NF}_{\min }$) is less than 0.2 dB and NF falls within the range of 4–4.5 dB. The LNA consumes only 3.38 mW from a 1.2-V supply, with a chip area of $550 \mu \mathrm{~m} \times 570 \mu \mathrm{~m}$.