Cryogenic L-UTSOI model for 22nm pMOS FD-SOI, including stress effects

In this paper, we explore the effect of mechanical stress on the electrical parameters, for the first time at cryogenic temperatures, using L-UTSOI 102.7 compact model. We update the model to ensure robustness and precision down to cryogenic temperatures and then we benchmark it with industrial 22nm Fully-Depleted Silicon-On-Insulator (FD-SOI) Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFET) both at 300K and 4.2K. We observe the stress evolution with temperature through the extracted parameters of our model, which acts as a reference for the numerical mechanical simulations. The simulation provides with meaningful insights on device performance.