A Single-Stage Inverter Based OTA Using Back-Gate Gain Boosting in 22nm FDSOI CMOS

This paper presents a single-stage inverter based operational transconductance amplifier (OTA) that incorporates a back-gate enabled gain boosting technique. The proposed concept significantly enhances the OTA’s small signal output impedance, allowing for the utilization of short channel devices to maximize the OTA’s bandwidth. Designed with 32 nm channel length within a 1 V supply domain, the OTA reveals a measured open-loop gain elevation from initially 24 dB to 42 dB, with a unity gain frequency of 28 GHz. Extensive measurement results across temperature, supply voltage and samples are presented confirming the robustness of the proposed concept.