An Area-Efficient Dual-Mode SAR ADC With 3-Level Analog Prediction to Compensate for Input Range Loss of Mismatch Error Shaping

This paper proposes a sophisticated 3-level analog prediction scheme designed to compensate for the input range loss associated with mismatch error shaping (MES). This innovative approach effectively nullifies prediction errors, enabling the application of MES to both noise-shaping (NS) and Nyquist ADCs, thereby facilitating a versatile dual-mode SAR ADC. Our prototype delivers an impressive SNDR/SFDR of $78.5 / 91.5 \mathrm{~dB}$ within a 31.25 kHz bandwidth, achieving a Schreier FoM of 175.8 dB in NS mode. Notably, in Nyquist mode, the SFDR escalates from 69.7 dB to 83.7 dB at Nyquist input. The proposed ADC, realized in a 65 nm process, features a compact area of only $0.01 \mathrm{~mm}^{2}$, making it the most compact yet efficient design to achieve an SNDR of 78 dB in processes larger than 28 nm.

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Publication Details

Published
2024-09-09
DOI
https://doi.org/10.1109/esserc62670.2024.10719499
Primary Topic
Analog and Mixed-Signal Circuit Design
Type
article
Field-Weighted Citation Impact
0.00

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article

An Area-Efficient Dual-Mode SAR ADC With 3-Level Analog Prediction to Compensate for Input Range Loss of Mismatch Error Shaping

Kiho Seong, Jeonghun Lee, Kwang‐Hyun Baek, Tony Tae-Hyoung Kim et al.
Analog and Mixed-Signal Circuit Design
article

An Area-Efficient Dual-Mode SAR ADC With 3-Level Analog Prediction to Compensate for Input Range Loss of Mismatch Error Shaping

Kiho Seong, Jeonghun Lee, Kwang‐Hyun Baek, Tony Tae-Hyoung Kim, Sukho Lee, Jeong Wook Seo
article en

Abstract

This paper proposes a sophisticated 3-level analog prediction scheme designed to compensate for the input range loss associated with mismatch error shaping (MES). This innovative approach effectively nullifies prediction errors, enabling the application of MES to both noise-shaping (NS) and Nyquist ADCs, thereby facilitating a versatile dual-mode SAR ADC. Our prototype delivers an impressive SNDR/SFDR of $78.5 / 91.5 \mathrm{~dB}$ within a 31.25 kHz bandwidth, achieving a Schreier FoM of 175.8 dB in NS mode. Notably, in Nyquist mode, the SFDR escalates from 69.7 dB to 83.7 dB at Nyquist input. The proposed ADC, realized in a 65 nm process, features a compact area of only $0.01 \mathrm{~mm}^{2}$, making it the most compact yet efficient design to achieve an SNDR of 78 dB in processes larger than 28 nm.

Electronics and Telecommunications Research Institute (KR), Nanyang Technological University (SG), Chung-Ang University (KR)
Ministry of Education
Openalex Percentile: Top 83%
Analog and Mixed-Signal Circuit Design
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An Area-Efficient Dual-Mode SAR ADC With 3-Level Analog Prediction to Compensate for Input Range Loss of Mismatch Error Shaping — Kiho Seong, Jeonghun Lee, et al. · (2024) | TGRS Research Map | TGRS