How Significant Is SET Programming Strategy in Enhancing RRAM Technology?

This paper benchmarks a range of programming strategies for resistive random-access memory (RRAM), employing both voltage-and current-mode methods in single pulse, and progressive verify formats. By introducing specific data representation techniques and metrics, we quantitatively assess the impact of these strategies on the conductance distribution of RRAM devices. Our findings demonstrate that progressive current programming methods substantially enhance the performance over single pulse and voltage-mode strategies, advocating for their adoption in the development of next-generation RRAM modules.