Simplified EPFL HEMT Model
This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic ($G m / I_{D}$). Relying on these figures, insights into GaN HEMT modeling in relation to technology offers a comprehensive understanding of the device behavior. Validation is achieved through measured transfer characteristics of GaN HEMTs fabricated at IMEC on a broad range of biases. This simplified approach should enable a simple and effective circuit design methodology with AlGaN/GaN HEMT heterostructures.
Authors
- Farzan Jazaeri (ORCID: https://orcid.org/0000-0001-9649-3572)
- Majid Shalchian (ORCID: https://orcid.org/0000-0001-9741-0804)
- Amin Rassekh (ORCID: https://orcid.org/0000-0002-6219-0458)
- Ashkhen Yesayan (ORCID: https://orcid.org/0000-0001-9735-1875)
- Jean-Michel Sallèse (ORCID: https://orcid.org/0000-0003-2109-909X)
- Bertrand Parvais (ORCID: https://orcid.org/0000-0003-0769-7069)
- Anurag Mangla
Institutions
- Amirkabir University of Technology (IR)
- Laboratoire d'Informatique Fondamentale de Lille (FR)
- IMEC (BE)
- École Polytechnique Fédérale de Lausanne (CH)
Publication Details
- Published
- 2024-09-09
- DOI
- https://doi.org/10.1109/esserc62670.2024.10719467
- Citations
- 3
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.93
Funders
- National Science Foundation