Understanding the impact of the dielectric layer in modulating the TER of FTJ devices

In this paper, we demonstrate an improvement of the On/Off ratio of FTJ devices by the introduction of a high-k Y<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> layer. To demonstrate the impact of the tunneling barrier layer on the performance of the FTJ, the $\mathbf{A l}_{2} \mathbf{O}_{3}$ dielectric layer is investigated for comparison. We report on the increase of the current density with cycling and observe how the on-current is mainly determined by the ferroelectric layer although the dielectric layer is contributing to a boost of the TER by influencing the off state.