Analysing the Sensitivity of a Photosensor Based on MoS₂ TFET for Visible Light Detection

In this work, a novel <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{MoS}_{2}$</tex>-based tunnel field-effect transistor photosensor is introduced for detecting visible light. A portion of the channel material serves as the light-sensitive region, inducing additional electron-hole pairs upon light exposure, thus generating a photovoltage, leading to enhanced tunneling. The device exhibits an ON current of around <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$10^{-5}\mathbf{A}/\mu\mathbf{m}$</tex> and an OFF current of around <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$10^{-18}\mathrm{A}/\mu \mathrm{m}$</tex>. To assess its photosensitivity, various wavelengths ranging from 400 nm to 700 nm within the visible spectrum were examined, yielding a corresponding responsivity of approximately <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$10^{4}$</tex> A/W and a quantum efficiency exceeding > 50%. These promising results mark the device in the category of next-generation low-power photosensor.