High Density 360 /μm Aligned CNT FET with I<sub>ON</sub> >1 mA/μm at -0.5 V V<sub>D</sub> and 30nm L<sub>ch</sub>
In this work, we demonstrate high performance FETs integrated on high density aligned carbon nanotube (ACNT) arrays and perform statistical analysis. The back-gate pFETs show $I_{\text {on }}\gt 1.2 \mathrm{~mA} / \mu \mathrm{m}, R_{\mathrm{c}} \sim 91 \Omega \cdot \mu \mathrm{~m}$, whereas the dual-gate pFETs show $I_{\text {on }} \sim 800 \mu \mathrm{~A} / \mu \mathrm{m}$, on-off ratio $\sim 5 \times 10^{3}$ at 30 nm channel length $\left(\mathrm{L}_{\mathrm{ch}}\right)$ and $-0.5 \mathrm{~V} \mathrm{~V}_{\mathrm{d}}$. The impact of gate dielectric, EOT scaling and post-fabrication annealing on the device performance are explored in batch. With process optimization, the on-state performance of dual-gate A-CNT FETs is approaching silicon technology.
Authors
- Jean‐François de Marneffe (ORCID: https://orcid.org/0000-0001-5178-6670)
- Marina Y. Timmermans
- Zaoyang Lin (ORCID: https://orcid.org/0009-0001-8257-7115)
- Thomas Nuytten (ORCID: https://orcid.org/0000-0002-5921-6928)
- Steven Brems (ORCID: https://orcid.org/0000-0002-0282-8528)
- Daire Cott
- César Javier Lockhart de la Rosa (ORCID: https://orcid.org/0000-0002-1401-0141)
- Gouri Sankar Kar (ORCID: https://orcid.org/0000-0003-3122-4237)
- Fengben Xi (ORCID: https://orcid.org/0000-0002-1616-1525)
- Himanshu Sharma (ORCID: https://orcid.org/0000-0002-1938-2489)
- Luca Mana
- Han Han (ORCID: https://orcid.org/0000-0003-2169-8332)
- Lijun Liu (ORCID: https://orcid.org/0000-0002-3070-3204)
- Xiangyu Wu (ORCID: https://orcid.org/0000-0002-6607-1819)
- Ludovic Goux
- Dennis Lin (ORCID: https://orcid.org/0000-0002-1577-6050)
Institutions
- IMEC (BE)
Publication Details
- Published
- 2024-09-09
- DOI
- https://doi.org/10.1109/esserc62670.2024.10719532
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Graphene Flagship