A 80 Gb/s PAM4 CMOS Transmitter Integrated with Two-Segment Silicon Microring Modulator
This paper presents a quarter-rate CMOS transmitter (TX) integrated with a two-segment silicon-based microring modulator (MRM). The AC-coupled pulsed-cascode high-swing voltage-mode MSB/LSB drivers achieve a 3.42 Vppd swing and offer independent level-tuning, edge-rate control, and asymmetric pre-emphasis on rising and falling edges. Implemented in a 28 nm CMOS process and co-packaged with the MRM via wirebonding, the proposed TX operates at 80 Gb/s PAM4 with a power efficiency of $3.66 \mathrm{pJ} / \mathrm{bit}$.
Authors
- Samuel Palermo (ORCID: https://orcid.org/0000-0002-6555-1474)
- Ruida Liu
- Inhyun Kim (ORCID: https://orcid.org/0000-0002-2455-9592)
- Marco Fiorentino (ORCID: https://orcid.org/0000-0001-8867-3098)
- Ankur Kumar (ORCID: https://orcid.org/0000-0002-9248-1416)
- Raymond G. Beausoleil (ORCID: https://orcid.org/0000-0003-1139-1660)
- Zhihong Huang (ORCID: https://orcid.org/0000-0003-4569-5400)
- Yuan Yuan (ORCID: https://orcid.org/0000-0003-0907-9934)
Institutions
- Analog Devices (United States) (US)
- Hewlett Packard Enterprise (United States) (US)
- Texas A&M University (US)
Publication Details
- Published
- 2024-09-09
- DOI
- https://doi.org/10.1109/esserc62670.2024.10719553
- Citations
- 2
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.42