Access region resistance in graphene Dirac-Source FETs: a Transfer-Matrix based study

This paper studies the impact of the access region on the on-state current of Dirac-Source FETs. To this purpose, we develop a transfer-matrix model for graphene p–n junctions and FETs, and validate it with experiments. Our analysis provides insights about the operation and design of these novel computing devices.

Authors

David Esseni (ORCID: https://orcid.org/0000-0002-3468-5197)
Erica Baccichetti

Institutions

University of Udine (IT)

Publication Details

Published: 2024-09-09
DOI: https://doi.org/10.1109/esserc62670.2024.10719492
Citations: 1
Primary Topic: Graphene research and applications
Type: article
Field-Weighted Citation Impact: 0.12

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article

Access region resistance in graphene Dirac-Source FETs: a Transfer-Matrix based study

David Esseni, Erica Baccichetti

Sep 9, 2024

1 citations

Graphene research and applications

0.12

article

Access region resistance in graphene Dirac-Source FETs: a Transfer-Matrix based study

David Esseni, Erica Baccichetti

September 9, 2024article en

1 citations

Abstract

University of Udine (IT)

Openalex Percentile: Top 59%

Graphene research and applications

0.12

DOI Source OpenAlex

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Access region resistance in graphene Dirac-Source FETs: a Transfer-Matrix based study — David Esseni, Erica Baccichetti · (2024) | TGRS Research Map | TGRS