A 25.6-60.0 GHz LNA with Inter-Stage Magnetic Coupling for Dual-Resonance Bandwidth Extension in 16nm-FinFET

This paper presents a $25.6-60.0 \mathrm{GHz}$ low-noise amplifier (LNA) designed in a 16nm FinFET process. The proposed magnetic coupling between the first and third stages creates a dual-resonant load to achieve wide-band gain (S21) from $23.7-60.0 \mathrm{GHz}$ with a peak gain of 16.4 dB. Inductive degeneration and resistive feedback techniques enable broadband dual-resonant input-matching (S11) under -10 dB from $25.6-67.0 \mathrm{GHz}$. Terminating the output network along with the dual-resonant load also allows for broadband dual-resonant output matching (S22) under -6 dB from $20.0-67.0 \mathrm{GHz}$. The LNA obtains an IIP3 of -4.8 dBm and a noise figure (NF) of 4.1 dB within the effective bandwidth, while only consuming 17 mW of power from an 850 mV supply.