A NRZ/PAM4 SST TX in 5nm FinFET CMOS with 3-tap FFE and 0.7pJ/b efficiency at 100 Gb/s PAM4

A source-series terminated (SST) transmitter (TX) for NRZ and PAM4 signaling across short reach channels (e.g., from a hub-chip to a processor die) is presented. The TX operates up to $100 \mathrm{~Gb} / \mathrm{s}$ PAM4 and shows an efficiency of 0.7 $\mathrm{pJ} / \mathrm{b}$ running from a 0.8 V supply. It provides feed-forward equalization (FFE) with 3 taps. There are 48 output stages of which 33 are assigned to the main tap and 15 are configurable to act as either pre-cursor, main or post-cursor taps. The target impedance of $50 \Omega$ is obtained at nominal conditions with 44 enabled output stages. This results in a maximum de-emphasis level of approximately 6 dB (33 main tap weights, 11 FFE tap weights). The TX is operated with a half-rate clock and provides in its clock path quadrature-error correction (QEC) and duty cycle error correction (DCC). The data path has a 32:1 serialization factor. The TX is fabricated in 5 nm FinFET CMOS technology and occupies an area of $220 \mu \mathrm{~m} \times 90 \mu \mathrm{~m}$.

Authors

Institutions

Publication Details

Published
2024-09-09
DOI
https://doi.org/10.1109/esserc62670.2024.10719524
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

A NRZ/PAM4 SST TX in 5nm FinFET CMOS with 3-tap FFE and 0.7pJ/b efficiency at 100 Gb/s PAM4

Pier Andrea Francese, Thomas Morf, Marcel Kossel, Matthias Brändli
Semiconductor materials and devices
article

A NRZ/PAM4 SST TX in 5nm FinFET CMOS with 3-tap FFE and 0.7pJ/b efficiency at 100 Gb/s PAM4

Pier Andrea Francese, Thomas Morf, Marcel Kossel, Matthias Brändli
article en

Abstract

A source-series terminated (SST) transmitter (TX) for NRZ and PAM4 signaling across short reach channels (e.g., from a hub-chip to a processor die) is presented. The TX operates up to $100 \mathrm{~Gb} / \mathrm{s}$ PAM4 and shows an efficiency of 0.7 $\mathrm{pJ} / \mathrm{b}$ running from a 0.8 V supply. It provides feed-forward equalization (FFE) with 3 taps. There are 48 output stages of which 33 are assigned to the main tap and 15 are configurable to act as either pre-cursor, main or post-cursor taps. The target impedance of $50 \Omega$ is obtained at nominal conditions with 44 enabled output stages. This results in a maximum de-emphasis level of approximately 6 dB (33 main tap weights, 11 FFE tap weights). The TX is operated with a half-rate clock and provides in its clock path quadrature-error correction (QEC) and duty cycle error correction (DCC). The data path has a 32:1 serialization factor. The TX is fabricated in 5 nm FinFET CMOS technology and occupies an area of $220 \mu \mathrm{~m} \times 90 \mu \mathrm{~m}$.

IBM Research - Zurich (CH)
Affordable and clean energy
Openalex Percentile: Top 84%
Semiconductor materials and devices
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

A NRZ/PAM4 SST TX in 5nm FinFET CMOS with 3-tap FFE and 0.7pJ/b efficiency at 100 Gb/s PAM4 — Pier Andrea Francese, Thomas Morf, et al. · (2024) | TGRS Research Map | TGRS