A 1.5-to-23.5 GHz High-Power-Density Distributed PA Achieving 150.5 Gb/s Data Rate With 14.4 dBm P<sub>avg</sub> Supporting 64/128/256-QAM in 40-nm CMOS
A distributed power amplifier (DPA) is presented for high-data-rate communication in 40-nm standard CMOS technology. Leveraging high-power-density cores, this DPA breaks the conventional compromise among output power, area and bandwidth. With the adoption of the Ruthroff-type distributed balun, balanced signals are efficiently combined across a broad bandwidth within a compact area. Furthermore, the implementation of a twisted output matching network ensures resonance with parasitic capacitance, while avoiding extra area overhead. The DPA achieves a 16.6-dB gain and delivers an output power of 19 dBm with 21.4% PAE at $P_{s a t}$, covering the bandwidth of 1.5 - 23.5 GHz from an 1.8-V supply. It reaches 150.5-Gb/s data rate with 14.4-dBm average output power in 128-QAM modulation. Besides, this study supports 256-QAM modulation at the data rate over 110 Gb/s.
Authors
- Xu Hongtao
- Li Wei (ORCID: https://orcid.org/0000-0003-2938-7758)
- Yunhao Li (ORCID: https://orcid.org/0000-0003-3158-8129)
- Yue Lin
- Wen Zuo (ORCID: https://orcid.org/0009-0006-9028-8379)
- S.K. Han (ORCID: https://orcid.org/0009-0003-9638-0895)
- Ziyang Deng
- Yun Wang (ORCID: https://orcid.org/0009-0008-3084-0365)
Institutions
- Fudan University (CN)
- Shanghai Fudan Microelectronics (China) (CN)
Publication Details
- Published
- 2024-09-09
- DOI
- https://doi.org/10.1109/esserc62670.2024.10719425
- Citations
- 1
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.21