Simulation of InGaAs Quantum Dot Photonic Cavities for 850 nm Free-Space Optical Communication
On-demand and pure single photons are the backbone of various quantum applications. Popular nonlinear conversion-based spontaneous parametric downconversion suffers from its probabilistic nature and the trade-off between brightness and purity. However, quantum dots, vacancies, and 2D material based on-demand single photon emitters are viable. Here, we focus on solid-state quantum dots because of their dimension tunability and their emission. In this communication, we focus on a specific wavelength of 850 nm, emitted from a dot, important for free space optical communication, unexplored previously. The proposed structure includes quantum dot made of InGaAs within a DBR cavity or without. We have studied the electric field, cavity mode and extraction efficiency of the proposed structures using 3D FDTD simulations.
Authors
- Santanu Manna (ORCID: https://orcid.org/0000-0002-0946-2629)
- Chandani Dubey (ORCID: https://orcid.org/0009-0003-6867-1812)
- Samaresh Das (ORCID: https://orcid.org/0000-0003-4159-1962)
- Ishrat Bashir
Institutions
- Indian Institute of Technology Delhi (IN)
Publication Details
- Published
- 2024-09-23
- DOI
- https://doi.org/10.1109/nusod62083.2024.10723470
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00