Simulation of InGaAs Quantum Dot Photonic Cavities for 850 nm Free-Space Optical Communication

On-demand and pure single photons are the backbone of various quantum applications. Popular nonlinear conversion-based spontaneous parametric downconversion suffers from its probabilistic nature and the trade-off between brightness and purity. However, quantum dots, vacancies, and 2D material based on-demand single photon emitters are viable. Here, we focus on solid-state quantum dots because of their dimension tunability and their emission. In this communication, we focus on a specific wavelength of 850 nm, emitted from a dot, important for free space optical communication, unexplored previously. The proposed structure includes quantum dot made of InGaAs within a DBR cavity or without. We have studied the electric field, cavity mode and extraction efficiency of the proposed structures using 3D FDTD simulations.

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Publication Details

Published
2024-09-23
DOI
https://doi.org/10.1109/nusod62083.2024.10723470
Primary Topic
Photonic and Optical Devices
Type
article
Field-Weighted Citation Impact
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Simulation of InGaAs Quantum Dot Photonic Cavities for 850 nm Free-Space Optical Communication

Santanu Manna, Chandani Dubey, Samaresh Das, Ishrat Bashir
Photonic and Optical Devices
article

Simulation of InGaAs Quantum Dot Photonic Cavities for 850 nm Free-Space Optical Communication

Santanu Manna, Chandani Dubey, Samaresh Das, Ishrat Bashir
article en

Abstract

On-demand and pure single photons are the backbone of various quantum applications. Popular nonlinear conversion-based spontaneous parametric downconversion suffers from its probabilistic nature and the trade-off between brightness and purity. However, quantum dots, vacancies, and 2D material based on-demand single photon emitters are viable. Here, we focus on solid-state quantum dots because of their dimension tunability and their emission. In this communication, we focus on a specific wavelength of 850 nm, emitted from a dot, important for free space optical communication, unexplored previously. The proposed structure includes quantum dot made of InGaAs within a DBR cavity or without. We have studied the electric field, cavity mode and extraction efficiency of the proposed structures using 3D FDTD simulations.

Indian Institute of Technology Delhi (IN)
Affordable and clean energy
Openalex Percentile: Top 84%
Photonic and Optical Devices
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