Vertical Transfer Gate Shape Impact on Full Well and Transfer Capabilities in a Photogate Pixel

Pixel shrinking requires new implementation of key components, such as the Vertical Transfer Gate (VEGA) for PhotoGate (PG) pixel architecture. High performances in terms of Full Well and charge transfer capacities are mandatory. We have investigated different strategies of VEGA implementation, with design and testing of three pixel variants: square VEGA (reference), I-shaped VEGA and L-shaped one. Both I-and L-shaped configurations are suitable for further pixel shrinking. Short I-shaped configuration gives a slightly improved Full Well Capacity (FWC) versus reference, while L-shaped variant brings a more significant FWC improvement of about $\mathbf{1 0 \%}$ compared to reference. Both configurations achieve a PRNU similar to the reference.

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Publication Details

Published
2024-09-09
DOI
https://doi.org/10.1109/esserc62670.2024.10719495
Primary Topic
CCD and CMOS Imaging Sensors
Type
article
Field-Weighted Citation Impact
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article

Vertical Transfer Gate Shape Impact on Full Well and Transfer Capabilities in a Photogate Pixel

Eric Vire, P. Malinge, J.-P. Carrere, Guo‐Neng Lu et al.
CCD and CMOS Imaging Sensors
article

Vertical Transfer Gate Shape Impact on Full Well and Transfer Capabilities in a Photogate Pixel

Eric Vire, P. Malinge, J.-P. Carrere, Guo‐Neng Lu, Louis Stephan, Emilie De Pretto
article en

Abstract

Pixel shrinking requires new implementation of key components, such as the Vertical Transfer Gate (VEGA) for PhotoGate (PG) pixel architecture. High performances in terms of Full Well and charge transfer capacities are mandatory. We have investigated different strategies of VEGA implementation, with design and testing of three pixel variants: square VEGA (reference), I-shaped VEGA and L-shaped one. Both I-and L-shaped configurations are suitable for further pixel shrinking. Short I-shaped configuration gives a slightly improved Full Well Capacity (FWC) versus reference, while L-shaped variant brings a more significant FWC improvement of about $\mathbf{1 0 \%}$ compared to reference. Both configurations achieve a PRNU similar to the reference.

Université Claude Bernard Lyon 1 (FR), Institut des Nanotechnologies de Lyon (FR), STMicroelectronics (France) (FR)
Openalex Percentile: Top 84%
CCD and CMOS Imaging Sensors
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