Elucidating Experimental Device-to-Device Variability in OxRAM Based on TCAD Modeling
The SET and RESET are the fundamental operations in oxide resistive memory devices (OxRAM). Combining experiments and advanced TCAD simulation, we examined the device-to-device variability and switching kinetics of these operations in HfO2-based OxRAM. Heat generation by electric current plays a key role, resulting in an inverse relation between current and voltage at the SET point. Therefore, the thermal conductance, especially at contact, and the size of the filament contribute to the device-to-device variabilities.
Authors
- François Triozon (ORCID: https://orcid.org/0000-0002-0215-8456)
- S. Martinie
- P. Blaise
- Wolfgang Goes (ORCID: https://orcid.org/0000-0001-9688-9921)
- Gaël Pillonnet (ORCID: https://orcid.org/0000-0003-0539-7185)
- Thomas Bauvent (ORCID: https://orcid.org/0000-0002-6263-6245)
- Y. Hirchaou
- Jing Li (ORCID: https://orcid.org/0000-0001-9019-7449)
- E. Carl Hylin
Institutions
- Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
- Laboratoire d'Électronique des Technologies de l'Information (FR)
- ProbaYes (France) (FR)
- Silvaco (United Kingdom) (GB)
- Université Grenoble Alpes (FR)
Publication Details
- Published
- 2024-09-09
- DOI
- https://doi.org/10.1109/esserc62670.2024.10719407
- Primary Topic
- Integrated Circuits and Semiconductor Failure Analysis
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Association Nationale de la Recherche et de la Technologie