Light Absorption and Electrical Characteristics of DUV-LED With Dual Superlattice Layer Growth

This study investigates the effects of utilizing dual superlattice layer growth instead of a uniform p-AlGaN layer. The objective is to enhance acceptor doping efficiency, reduce absorption losses, and lower operating voltage. The results demonstrate significant improvements, including a 212% increase in light output power, a 144% increase in internal quantum efficiency, and a 16% reduction in efficiency droop, accompanied by a substantial reduction in absorption losses.