Numerical Simulation of Copper Bismuth Oxide Based Solar Cells Using SCAPS-1D With WO<sub>3</sub> as Electron Transport Layer: Nonideal Conditions

There are simulation studies on copper bismuth oxide (CBO) based solar cells (SCs) using SCAPS-1D. However, all are in ideal conditions which are far away from realistic values. In this work, simulation studies have been performed for thin film SCs with CBO and WO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> as a light harvesting layer (LHL) and electron transport layer (ETL) using SCAPS 1D in nonideal conditions such as parasitic resistance, reflection losses, and recombination.

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Published
2024-09-23
DOI
https://doi.org/10.1109/nusod62083.2024.10723625
Primary Topic
Copper-based nanomaterials and applications
Type
article
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article

Numerical Simulation of Copper Bismuth Oxide Based Solar Cells Using SCAPS-1D With WO3 as Electron Transport Layer: Nonideal Conditions

T. Pandiyarajan, Muhammad Panachikkool
Copper-based nanomaterials and applications
article

Numerical Simulation of Copper Bismuth Oxide Based Solar Cells Using SCAPS-1D With WO3 as Electron Transport Layer: Nonideal Conditions

T. Pandiyarajan, Muhammad Panachikkool
article en

Abstract

There are simulation studies on copper bismuth oxide (CBO) based solar cells (SCs) using SCAPS-1D. However, all are in ideal conditions which are far away from realistic values. In this work, simulation studies have been performed for thin film SCs with CBO and WO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> as a light harvesting layer (LHL) and electron transport layer (ETL) using SCAPS 1D in nonideal conditions such as parasitic resistance, reflection losses, and recombination.

Indian Institute of Information Technology Allahabad (IN), Indian Institute of Information Technology Design and Manufacturing, Kurnool
Affordable and clean energy
Openalex Percentile: Top 88%
Copper-based nanomaterials and applications
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