Layout Dependent Effect Analysis and Modeling for Comprehensive, Practical Layout Patterns in 18nm FDSOI Technology

This paper presents the LDE (Layout Dependent Effect) of irregularly designed layouts, frequently used in practical circuit structures, in comparison to the ideally drawn layouts representing a single LDE at a time. Various test structures have been prepared with $18-\mathrm{nm}$ FDSOI technology to analyze the device characteristics depending on the horizontal and vertical RX-to-RX distance with respect to practically designed neighboring RXs (diffusion and channel areas), and two following effects are discussed in this paper: (1) dependency of channel proximity on RX-to-RX vertical distance, (2) diagonal $R X$ effect in addition to the horizontal and vertical RX. The result shows that the LDE of irregular layouts cannot be modeled by simple superposition or average of ideal cases. Finally, a modeling methodology to accurately describe the presented LDE is proposed.