Study of Heterojunction Dual Gate Vertical TFET Applications in Gas Sensing

MOSFET based gas sensors have appeared as preferred choices for environmental safety across various sectors due to their durability, low cost, and rapid sensing capability. This work proposes the use of catalytic metals as gate contacts in Heterojunction Dual Gate Vertical TFET (HJ-DGVTFET) for gas sensing applications. For band-to-band tunnelling (BTBT), the vertical double-sided gate design offers superior gate controllability compared to traditional TFETs. The HJ-DGVTFET architecture is examined for hydrogen sensing using palladium (Pd) as the gate metal, ammonia sensing using cobalt (Co), oxygen sensing using silver (Ag) and carbon monoxide using platinum (Pt) metals as the gate contacts. Using the Sentaurus TCAD simulator, the characteristics of the suggested structure are examined regarding the surface potential, electric field, and energy bandgap graphs pertaining to the adsorption of gas molecules. For Ag, Co, Pd, and Pt as gate metals, simulation results of HJ-DGVTFET provide strong sensitivity calibrations (SIdoff ∼ 7, 3.37, 2.75 and 2.18) and high I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">don</inf>/I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">doff</inf> ratios (∼ 9.14 × 10<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf>, 1.58 × 10<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf>, 7.11 × 10<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf>, and 3.65 × 10<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>).