Investigating the Impact of Quantum Barriers on the Ideality Factor of InGaN/GaN Multi-quantum-well Light Emitting Diodes
Electrical Characteristics of InGaN/GaN multi-quantum-well (MQW) light emitting diodes (LED) were sim-ulated for various well/barrier structures in the active region. The results showed that the values of ideality factors are heavily dependent on the properties of the quantum barriers (QB). For a single quantum well LED, the ideality factor (η) was found to be near unity (η = 1.01) and increased to a value of η = 1.83 for seven quantum wells separated by six QBs. The value of η also increased with the thickness of the QBs. Further investigation revealed a higher indium concentration in the quantum wells also increases η through an enhancement in the potential of the QBs.
Authors
- Apurba Laha (ORCID: https://orcid.org/0000-0001-7320-642X)
- Ayan Kumar Das (ORCID: https://orcid.org/0000-0001-6246-5944)
- Dhatri Mehta
- Soumyadip Chatterjee
- Shrawani Dandge
Institutions
- Indian Institute of Technology Bombay (IN)
Publication Details
- Published
- 2024-09-23
- DOI
- https://doi.org/10.1109/nusod62083.2024.10723534
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Indian Institute of Technology Bombay