Optimization of Device Parameters for CIGS Based Solar Cell Using SnO₂ as Window Layer

In this study, the performance of CIGS based thin film solar cell is evaluated using SCAPS-1D device simulator. Unlike the conventional CdS/CIGS solar cell, we attempted an alternate buffer layer ZnS which has wider band gap, environment friendly and toxic free material. Further, we have used wide band gap SnO2 as window layer to achieve low losses from solar spectrum. The solar cell device parameters (Jsc, Voc, FF and ƞ) are analyzed with variation of doping thickness and band gap of absorber layer. In order to investigate the performance of proposed structure, we have optimized band gap, thickness and doping of the absorber layer. Best efficiency of 23.88% is obtained for the optimized device structure.