Simulation of Multi-Valent Defects in Perovskite Solar Cell Using SnO<sub>2</sub> as Buffer Layer
Recombination of electron in conduction band with hole in valence band through traps result in major deterioration of solar cell parameters. SRH (Shockley-read-hall) or trap assisted recombination is dominant in perovskite based solar cells. The influence of defect density on solar cell parameters is compared between TiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> and SnO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> buffer layers of the proposed Ag/CH<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>NH<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>SnI<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>/SnO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>/ZnO solar cell structure. The device with SnO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> buffer layer has shown improvement of close to 10% in efficiency for the defect range considered (IE13 to 1E17 cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−3</sup>)
Authors
- K Anandan
- Kondapalli Siva Prasad (ORCID: https://orcid.org/0000-0002-2085-7824)
- B. Havilah
Publication Details
- Published
- 2024-09-23
- DOI
- https://doi.org/10.1109/nusod62083.2024.10723478
- Primary Topic
- Perovskite Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00