A Monolithically Integrated 640 × 512 CMOS-Perovskite Image Sensor

The demand for enhanced imager sensing drives innovation in fabrication and device schemes through the integration of new materials. Despite the dominance of CMOS in signal processing, improved image sensing relies on effectively integrating novel photo-absorption materials with CMOS chips. Perovskite films, renowned for their exceptional optoelectronic properties, offer a viable alternative to silicon in photodetectors. So far, the absence of full integration with CMOS IC technology, coupled with the reliance on external readout mechanisms, has not only limited the potential for miniaturization but also impacted cost efficiency. This presents a major bottleneck in the development of photodetector arrays based on perovskite films. Here, we demonstrate a heterogeneous integration architecture that achieves the monolithic integration of perovskite pixels with CMOS IC in an efficient and cost-effective fabrication approach, utilizing a global electrode structure. A $640 \times 512$ CMOS-perovskite image sensor is presented. The architecture and fabrication process are distinguished by their cost-effectiveness, efficiency in terms of time and labor, ease of operation and scalability for mass production. This heterogeneous chip achieves a functional pixel density of $\mathbf{9 8. 7 \%}$ and the max signal-to-noise ratio (SNR) of 48.5 dB. The monolithic integration of perovskite film with CMOS IC demonstrated is unfolding the vision for the next generation of high-performance image sensors.