A Ku-Band GaN MMIC Push-Pull Power Amplifier with Coupled-Line Balun and Capacitive Neutralization for 6G Applications
This paper demonstrates a $11.0-17.5 \mathrm{GHz}$ GaN on SiC MMIC push-pull power amplifier (PA) for emerging 6G FR3 centimeter-wave (cmWave) applications, featuring an innovative input balun for impedance matching, an output balun to counteract transistor parasitics for enhanced bandwidth and compactness, and cross-coupled neutralization networks with interdigitated and metal-insulator-metal (MIM) capacitors to boost stability and gain. To validate the proposed design, a prototype GaN MMIC push-pull PA was fabricated. Experimental results exhibit a peak power added efficiency (PAE) of $18 \%-34 \%$ with an output power of $34.0-36.5 \mathrm{dBm}$ within the design frequencies.
Authors
- Christian Fager (ORCID: https://orcid.org/0000-0001-8228-0736)
- Haojie Chang (ORCID: https://orcid.org/0000-0001-9237-0081)
- Han Zhou (ORCID: https://orcid.org/0000-0003-0014-5317)
Institutions
- Chalmers University of Technology (SE)
Publication Details
- Published
- 2024-09-09
- DOI
- https://doi.org/10.1109/esserc62670.2024.10719504
- Citations
- 9
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 2.80