MONTE CARLO SIMULATION OF THE INITIAL STAGES OF PLANAR GaAs NANOWIRE GROWTH ON SiOX FILMS

The initial stages of self-catalyzed GaAs nanowire growth on GaAs (111)A substrates coated with SiOx films was simulated by Monte Carlo. The effect of oxide thickness on the wettability by gallium droplets was analyzed. The influence of oxide morphology and properties on the orientation of the GaAs nanowires was demonstrated.

Authors

Nataliya L. Shwartz (ORCID: https://orcid.org/0000-0003-1111-0574)
Snezhana V. Mantsurova (ORCID: https://orcid.org/0009-0007-7278-3023)

Publication Details

Published: 2024-10-20
DOI: https://doi.org/10.29003/m4268.mmmsec-2024/88-91
Primary Topic: GaN-based semiconductor devices and materials
Type: article
Field-Weighted Citation Impact: 0.00

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article

MONTE CARLO SIMULATION OF THE INITIAL STAGES OF PLANAR GaAs NANOWIRE GROWTH ON SiOX FILMS

Nataliya L. Shwartz, Snezhana V. Mantsurova

Oct 20, 2024

GaN-based semiconductor devices and materials

article

MONTE CARLO SIMULATION OF THE INITIAL STAGES OF PLANAR GaAs NANOWIRE GROWTH ON SiOX FILMS

Nataliya L. Shwartz, Snezhana V. Mantsurova

October 20, 2024article en

Abstract

Openalex Percentile: Top 89%

GaN-based semiconductor devices and materials

DOI Open Access PDF OpenAlex

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MONTE CARLO SIMULATION OF THE INITIAL STAGES OF PLANAR GaAs NANOWIRE GROWTH ON SiOX FILMS — Nataliya L. Shwartz, Snezhana V. Mantsurova · (2024) | TGRS Research Map | TGRS