ON ELECTROPHYSICAL PROPERTIES OF METAL OXIDE MEMRISTORS
A non-stationary one-dimensional physical and mathematical model of mass transfer of oxygen vacancies and trapped electrons in a selfconsistent electric field is presented, this model allows to determine the influence of temperature on the electrophysical properties of metal oxide memristors
Authors
- Alexander N. Busygin (ORCID: https://orcid.org/0000-0002-3439-8067)
- Н. С. Шулаев (ORCID: https://orcid.org/0000-0002-3595-6948)
- Alexander D. Pisarev (ORCID: https://orcid.org/0000-0002-5602-3880)
- S. Yu. Udovichenko (ORCID: https://orcid.org/0000-0003-3583-7081)
- Alireza Ebrahim
- Baurzhan H. Gabdulin
Publication Details
- Published
- 2024-10-20
- DOI
- https://doi.org/10.29003/m4278.mmmsec-2024/128-131
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00