All‐Electronic Memristor Based on Charge Carrier Confinement in Bulk Semiconductor of Metal–Semiconductor–Metal Structure

Abstract Memristors have gained significant attention in recent years due to their potential applications in computing and memory technology by offering higher performance, lower power consumption, and increased storage capacity. In this paper, a new type of volatile memristor is presented by analyzing the dynamic behavior of charge carriers within a metal–semiconductor–metal (MSM) structure. It is shown that an all‐electronic memristor is achieved through the confinement of majority charge carriers within the bulk semiconductor by the favor of high barrier Schottky contacts. The findings reveal a remarkable current offset between forward and backward scans, along with exceptional current pulse consistency with a tunable current level using pulse frequency. These characteristics greatly simplify the process of designing electrical circuits incorporating this memristor variant. Furthermore, this research paves the way for the development of crystalline semiconductor‐based memristors. While various semiconductors with controllable doping densities can be considered as potential candidates for this type of memristor, the calculations using silicon demonstrate the integration of this semiconductor with the current technology holds significant promise for two terminal memristors.